DS28E22??????? - ??? fips?180 - 3???(sha - 256)? ?2kb??eeprom???? ?????sha - 256 ?????64 rom?(rom?id)????rom ? id????? ????????DS28E22 ????????? ??????DS28E22??? ????DS28E22?? ?DS28E22sha - 256??(mac) ?????64 rom?id?DS28E22?1 - wire ? ? ????1 - wire?1 - wire rom ? id??? ? ??? ?id/?? ? ????? /?? ???? ???? s sha- 256??????? s ???shasha- 256 mac s ????? ?? s 2048?eeprom?8???256 s ????eeprom?? ??/?otp/eprom s ??64? s 1-wire??????76.9kbps s 3.3v 10% -40 c+85 c s 5 a (?)? s 8kv??esd(?) s 6tdfn6tsoc? ?? 219-0020; rev 2; 12/12 ??????????????? ?????maxim?10800 852 1249 ()10800 152 1249 () maxim?china.maximintegrated.com sda v cc scl slpz io r p r p = 1.1k maximum i 2 c bus capacitance 320pf 3.3v 1-wire line c (i 2 c port) ds2465 DS28E22 ?? ???????china.maximintegrated.com/DS28E22.related ? deepcover?1 - wire?maxim ? integrated ? products, ? inc.???? DS28E22 1 - wire sha - 256?? 2kb?eeprom
2 io voltage range to gnd ...................................... -0.5v to 4.0v io sink current ................................................................... 20ma operating temperature range .......................... -40nc to +85nc junction temperature ..................................................... +150nc storage temperature range ............................ -55nc to +125nc lead temperature (soldering, 10s) ................................ +300nc soldering temperature (reflow) ...................................... +260nc absolute maximum ratings stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional opera - tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. electrical characteristics (t a = -40nc to +85 nc, unless otherwise noted.) (note 1) parameter symbol conditions min typ max units io pin: general data 1-wire pullup voltage v pup (note 2) 2.97 3.63 v 1-wire pullup resistance r pup v pup = 3.3v q 10% (note 3) 300 1500 i input capacitance c io (notes 4, 5) 1500 pf input load current i l io pin at v pup 5 19.5 fa high-to-low switching threshold v tl (notes 6, 7) 0.65 x v pup v input low voltage v il (notes 2, 8) 0.3 v low-to-high switching threshold v th (notes 6, 9) 0.75 x v pup v switching hysteresis v hy (notes 6, 10) 0.3 v output low voltage v ol i ol = 4ma (note 11) 0.4 v recovery time t rec r pup = 1500i (notes 2, 12) 5 fs time-slot duration t slot (notes 2, 13) 13 fs io pin: 1-wire reset, presence-detect cycle reset low time t rstl (note 2) 48 80 fs reset high time t rsth (note 14) 48 fs presence-detect sample time t msp (notes 2, 15) 8 10 fs io pin: 1-wire write write-zero low time t w0l (notes 2, 16) 8 16 fs write-one low time t w1l (notes 2, 16) 1 2 fs io pin: 1-wire read read low time t rl (notes 2, 17) 1 2 - d fs read sample time t msr (notes 2, 17) t rl + d 2 fs eeprom programming current i prog v pup = 3.63v (notes 5, 18) 1 ma programming time for a 32-bit segment or page protection t prd refer to the full data sheet. ms programming time for the secret t prs ms write/erase cycling endurance n cy t a = +85nc (notes 21, 22) 100k data retention t dr t a = +85nc (notes 23, 24, 25) 10 years maxim integrated DS28E22 1 - wire sha - 256?? 2kb?eeprom
3 electrical characteristics (continued) (t a = -40nc to +85 nc, unless otherwise noted.) (note 1) note 1: limits are 100% production tested at t a = +25c and/or t a = +85c. limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. typical values are not guaranteed. note 2: system requirement. note 3: maximum allowable pullup resistance is a function of the number of 1-wire devices in the system and 1-wire recovery times. the specified value here applies to systems with only one device and with the minimum 1-wire recovery times. note 4: typical value represents the internal parasite capacitance when v pup is first applied. once the parasite capacitance is charged, it does not affect normal communication. note 5: guaranteed by design and/or characterization only; not production tested. note 6: v tl , v th , and v hy are a function of the internal supply voltage, which is a function of v pup , r pup , 1-wire timing, and capacitive loading on io. lower v pup , higher r pup , shorter t rec , and heavier capacitive loading all lead to lower values of v tl , v th , and v hy . note 7: voltage below which, during a falling edge on io, a logic-zero is detected. note 8: the voltage on io must be less than or equal to v ilmax at all times when the master is driving io to a logic-zero level. note 9: voltage above which, during a rising edge on io, a logic-one is detected. note 10: after v th is crossed during a rising edge on io, the voltage on io must drop by at least v hy to be detected as logic-zero. note 11: the i-v characteristic is linear for voltages less than 1v. note 12: applies to a single device attached to a 1-wire line. note 13: defines maximum possible bit rate. equal to 1/(t w0lmin + t recmin ). note 14: an additional reset or communication sequence cannot begin until the reset high time has expired. note 15: interval after t rstl during which a bus master can read a logic 0 on io if there is a DS28E22 present. the power-up pres - ence detect pulse could be outside this interval, but will be complete within 2ms after power-up. note 16: in figure 11 represents the time required for the pullup circuitry to pull the voltage on io up from v il to v th . the actual maximum duration for the master to pull the line low is t w1lmax + t f - and t w0lmax + t f - , respectively. note 17: d in figure 11 represents the time required for the pullup circuitry to pull the voltage on io up from v il to the input-high threshold of the bus master. the actual maximum duration for the master to pull the line low is t rlmax + t f . note 18: current drawn from io during the eeprom programming interval or sha-256 computation. the pullup circuit on io during the programming interval or sha-256 computation should be such that the voltage at io is greater than or equal to 2.0v. note 19: refer to the full data sheet. note 20: refer to the full data sheet. note 21: write-cycle endurance is tested in compliance with jesd47g. note 22: not 100% production tested; guaranteed by reliability monitor sampling. note 23: data retention is tested in compliance with jesd47g. note 24: guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to the data sheet limit at operating temperature range is established by reliability testing. note 25: eeprom writes can become nonfunctional after the data retention time is exceeded. long-term storage at elevated tem - peratures is not recommended. note 26:refer to the full data sheet. parameter symbol conditions min typ max units sha-256 engine computation current i csha refer to the full data sheet. ma computation time t csha ms maxim integrated DS28E22 1 - wire sha - 256?? 2kb?eeprom
4 ? tsoc tdfn-ep 1 3 gnd ?? 2 2 io 1 - wire???????? 3, 4, 5, 6 1, 4, 5, 6 n.c. ? ep ?(tdfn?)?????? ??3273 exposed ? pads: ? a ? brief ? introduction top view n.c. io gnd n.c. n.c. n.c. tsoc + 5 4 6 2 3 1 DS28E22 16 n.c. n.c. 25 io n.c. 34 gnd n.c. tdfn (3mm 3mm) top view DS28E22 28e22 ymrrf + ep maxim integrated DS28E22 1 - wire sha - 256?? 2kb?eeprom
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